Datasheet > SSM6K32TU(TE85L)

SSM6K32TU(TE85L)

更新时间： 2024-11-18 21:04:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	399K
描述
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2A I(D),TSOP

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中文翻译

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技术参数
数据手册

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SSM6K32TU(TE85L) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	2 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.5 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

SSM6K32TU(TE85L) 数据手册

SSM6K32TU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6K32TU

Unit: mm

○Relay drive, DC-DC converter application

4-V drive

Low ON-resistance:

= 440mΩ (max) (@V

= 4 V)

DS(ON)

= 300mΩ (max) (@V

= 10 V)

DS(ON)

Absolute Maximum Ratings (Ta = 25℃)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

Gate-source voltage

±20

GSS

Drain current

1,2,5,6 : Drain

Pulse

: Gate

: Source

Power dissipation

(Note 1)

500

°C

Channel temperature

Storage temperature range

150

−55 to 150

°C

stg

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

⎯

TOSHIBA

2-2T1D

Weight: 7.0 mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Mounted on FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )

2010-02-05

12 3 4 5 6 7

中文翻译

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