Datasheet > SSM6K24FE(TE85L)

SSM6K24FE(TE85L)

更新时间： 2024-11-18 15:52:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	145K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,500MA I(D),SOT-563

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技术参数
数据手册

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SSM6K24FE(TE85L) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	0.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.5 W
子类别：	FET General Purpose Powers	表面贴装：	YES
Base Number Matches：	1

SSM6K24FE(TE85L) 数据手册

SSM6K24FE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

SSM6K24FE

High Speed Switching Applications

Unit: mm

1.6±0.05

1.2±0.05

•

Optimum for high-density mounting in small packages

Low on-resistance:

= 145mΩ (max) (@V

= 180mΩ (max) (@V

= 4.5 V)

= 2.5 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

± 12

0.5

Gate-Source voltage

GSS

Drain current

Pulse

1.5

Drain power dissipation

Channel temperature

500

1,2,5,6 :Drain

3 :Gate

4 :Source

(Note 1)

150

°C

Storage temperature range

stg

−55~150

ES6

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-2N1A

Weight: 3.0 mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Mounted on FR4 board.

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )

Marking

Equivalent Circuit (top view)

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5

中文翻译

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与SSM6K24FE(TE85L)相关器件

型号	品牌	获取价格	描述	数据表
SSM6K24FE(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,500MA I(D),SOT-563
SSM6K24FE(TPL3)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,500MA I(D),SOT-563
SSM6K25FE	TOSHIBA	获取价格	High Speed Switching Applications
SSM6K25FE(TE85L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,500MA I(D),TSOP
SSM6K25FE(TPL3,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,500MA I(D),TSOP
SSM6K30FE	TOSHIBA	获取价格	Field Effect Transistor Silicon P Channel MOS
SSM6K30FE(TE85L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.2A I(D),TSOP
SSM6K30FE(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.2A I(D),TSOP
SSM6K30FE(TPL3)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.2A I(D),TSOP
SSM6K31FE	TOSHIBA	获取价格	High speed switching

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