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SSM6K25FE(TE85L) PDF预览

SSM6K25FE(TE85L)

更新时间： 2024-11-18 14:44:59
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 145K
描述
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,500MA I(D),TSOP

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SSM6K25FE(TE85L) 技术参数

是否Rohs认证： 不符合生命周期：Lifetime Buy
包装说明：,Reach Compliance Code：unknown
风险等级：5.84配置：Single
最大漏极电流 (Abs) (ID)：0.5 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.5 W
子类别：FET General Purpose Powers表面贴装：YES
Base Number Matches：1

SSM6K25FE(TE85L) 数据手册

 浏览型号SSM6K25FE(TE85L)的Datasheet PDF文件第2页浏览型号SSM6K25FE(TE85L)的Datasheet PDF文件第3页浏览型号SSM6K25FE(TE85L)的Datasheet PDF文件第4页浏览型号SSM6K25FE(TE85L)的Datasheet PDF文件第5页 
SSM6K25FE  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)  
SSM6K25FE  
High Speed Switching Applications  
Unit: mm  
1.6±0.05  
1.2±0.05  
•
•
Optimum for high-density mounting in small packages  
Low on-resistance:  
R
on  
R
on  
R
on  
= 395mΩ (max) (@V  
= 190mΩ (max) (@V  
= 145mΩ (max) (@V  
= 1.8 V)  
= 2.5 V)  
= 4.0 V)  
GS  
GS  
GS  
1
2
6
5
Absolute Maximum Ratings (Ta = 25°C)  
4
3
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
20  
± 12  
0.5  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
D
Drain current  
A
Pulse  
I
1.5  
DP  
1,2,5,6 :Drain  
3 :Gate  
4 :Source  
P
D
Drain power dissipation  
Channel temperature  
500  
mW  
(Note 1)  
T
ch  
150  
°C  
°C  
Storage temperature range  
T
stg  
−55~150  
ES6  
JEDEC  
―
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEITA  
―
TOSHIBA  
2-2N1A  
Weight: 3.0 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on FR4 board.  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )  
2
Marking  
Equivalent Circuit (top view)  
6
5
4
6
5
4
NH  
1
2
3
1
2
3
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is  
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects  
that come into direct contact with devices should be made of anti-static materials.  
1
2007-11-01  
12345

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