Datasheet > SSM6K30FE(TE85L)

SSM6K30FE(TE85L)

更新时间： 2024-11-18 21:19:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	261K
描述
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.2A I(D),TSOP

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SSM6K30FE(TE85L) 技术参数

是否Rohs认证：	不符合	生命周期：	Lifetime Buy
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	1.2 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.5 W
子类别：	FET General Purpose Powers	表面贴装：	YES
Base Number Matches：	1

SSM6K30FE(TE85L) 数据手册

SSM6K30FE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Π-MOS VII)

SSM6K30FE

○High-speed switching

○DC-DC Converter

Unit: mm

•

Small package

Low R : R

= 210 mΩ (max) (@V

= 10 V)

= 4 V)

DS (ON) DS(ON)

: R

= 420 mΩ (max) (@V

DS(ON)

•

High-speed switching: t = 19 ns (typ.)

: t = 10 ns (typ.)

off

Absolute Maximum Ratings (Ta = 25°C)

1,2,5,6: Drain

3: Gate

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

4: Source

±20

Gate-Source voltage

GSS

1.2

Drain current

JEDEC

JEITA

―

Pulse

2.4

Drain power dissipation

Channel temperature

Storage temperature

(Note 1)

500

°C

TOSHIBA

2-2N1J

150

−55 to 150

°C

Weight: 3 mg (typ.)

stg

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 mm (t), Cu pad: 645 mm²)

Marking

Equivalent Circuit (top view)

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), ensure that the

environment is protected against static electricity. Operators should wear anti-static clothing, and containers

and other objects that come into direct contact with devices should be made of anti-static materials.

2009-02-23

12 3 4 5 6

中文翻译

下载PDF

与SSM6K30FE(TE85L)相关器件

型号	品牌	获取价格	描述	数据表
SSM6K30FE(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.2A I(D),TSOP
SSM6K30FE(TPL3)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.2A I(D),TSOP
SSM6K31FE	TOSHIBA	获取价格	High speed switching
SSM6K32TU	TOSHIBA	获取价格	Relay drive, DC/DC converter application
SSM6K32TU(TE85L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2A I(D),TSOP
SSM6K32TU(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2A I(D),TSOP
SSM6K341NU	TOSHIBA	获取价格	Power Field-Effect Transistor
SSM6K34TU	TOSHIBA	获取价格	High Current Switching Applications
SSM6K361NU	TOSHIBA	获取价格	N-ch MOSFET, 100 V, 3.5 A, 0.069 Ω@10V, SOT-1
SSM6K361NU,LF	TOSHIBA	获取价格	Power Field-Effect Transistor, 3.5A I(D), 100V, 0.069ohm, 1-Element, N-Channel, Silicon, M

与SSM6K30FE(TE85L)相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

SSM6K30FE(TE85L)

SSM6K30FE(TE85L) 技术参数

SSM6K30FE(TE85L) 数据手册

与SSM6K30FE(TE85L)相关器件

与SSM6K30FE(TE85L)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SSM6K30FE(TE85L)

SSM6K30FE(TE85L) 技术参数

SSM6K30FE(TE85L) 数据手册

与SSM6K30FE(TE85L)相关器件

与SSM6K30FE(TE85L)相关文章

您还可以找

您在本页遇到什么问题？