是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | 2-2N1A, 6 PIN | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.46 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 0.5 A |
最大漏极电流 (ID): | 0.5 A | 最大漏源导通电阻: | 0.145 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F6 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.5 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM6K24FE(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,500MA I(D),SOT-563 | |
SSM6K24FE(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,500MA I(D),SOT-563 | |
SSM6K24FE(TPL3) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,500MA I(D),SOT-563 | |
SSM6K25FE | TOSHIBA |
获取价格 |
High Speed Switching Applications | |
SSM6K25FE(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,500MA I(D),TSOP | |
SSM6K25FE(TPL3,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,500MA I(D),TSOP | |
SSM6K30FE | TOSHIBA |
获取价格 |
Field Effect Transistor Silicon P Channel MOS | |
SSM6K30FE(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.2A I(D),TSOP | |
SSM6K30FE(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.2A I(D),TSOP | |
SSM6K30FE(TPL3) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.2A I(D),TSOP |