Datasheet > SSM6J808R

SSM6J808R

更新时间： 2024-10-03 14:57:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	373K
描述
P-ch MOSFET, -40 V, -7 A, 0.035 Ω@10V, TSOP6F

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中文翻译

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数据手册

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SSM6J808R 数据手册

SSM6J808R

MOSFETs Silicon P-Channel MOS (U-MOS�)

SSM6J808R

1. Applications

•

Power Management Switches

2. Features

(1) AEC-Q101 qualified (Please see the orderable part number list)

(2) 4-V drive

(3) Low drain-source on-resistance

: RDS(ON) = 28 mΩ (typ.) (VGS = -10 V)

RDS(ON) = 35 mΩ (typ.) (VGS = -4.5 V)

RDS(ON) = 38 mΩ (typ.) (VGS = -4 V)

3. Packaging and Internal Circuit

1: Drain

2: Drain

3: Gate

4: Source

5: Drain

6: Drain

TSOP6F

4. Orderable part number

Orderable part number

AEC-Q101

Note

SSM6J808R,LF

ꢀ

General Use

SSM6J808R,LXGF

SSM6J808R,LXHF

YES

(Note 1)

Unintended Use

Automotive Use

(Note 1)

Note 1: For more information, please contact our sales or use the inquiry form on our website.

Start of commercial production

2019-09

2021-05-28

Rev.5.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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