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SSM6K203FE(TE85L,F)

更新时间： 2024-10-02 15:52:55
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东芝 - TOSHIBA /
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SSM6K203FE(TE85L,F)

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SSM6K203FE(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.84Base Number Matches：1

SSM6K203FE(TE85L,F) 数据手册

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SSM6K203FE  
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type  
SSM6K203FE  
○High-Speed Switching Applications  
Unit: mm  
○Power Management Switch Applications  
•
1.5 V drive  
•
Low ON-resistance:  
R
on  
R
on  
R
on  
R
on  
= 153 mΩ (max) (@V  
= 106 mΩ (max) (@V  
= 1.5V)  
= 1.8V)  
GS  
GS  
= 76 mΩ (max) (@V  
= 61 mΩ (max) (@V  
= 2.5V)  
= 4.0V)  
GS  
GS  
Absolute Maximum Ratings (Ta = 25˚C)  
Characteristic  
Drain–source voltage  
Symbol  
Rating  
Unit  
V
V
20  
± 10  
V
V
DSS  
Gate–source voltage  
GSS  
DC  
I
2.8  
D
Drain current  
A
Pulse  
I
5.6  
DP  
Drain power dissipation  
Channel temperature  
Storage temperature  
P
(Note 1)  
500  
mW  
°C  
D
T
ch  
150  
1, 2, 5, 6 : Drain  
T
stg  
−55 to 150  
°C  
3
4
: Gate  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
: Source  
ES6  
JEDEC  
JEITA  
―
―
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
TOSHIBA  
2-2N1A  
Weight: 3 mg (typ.)  
Note 1: Mounted on an FR4 board  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
I
= 1 mA, V  
= 1 mA, V  
= 0 V  
= –10 V  
= 0 V  
= 0 V  
20  
12  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
V
V
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain–source breakdown voltage  
V
Drain cutoff current  
I
V
V
V
V
= 20 V, V  
μA  
μA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
GS  
= ± 10 V, V  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
⎯
±1  
1.0  
⎯
61  
76  
106  
153  
⎯
DS  
= 3 V, I = 1 mA  
V
0.35  
5.3  
⎯
⎯
⎯
⎯
⎯
⎯
th  
⏐Y ⏐  
D
= 3 V, I = 2.0 A  
(Note2)  
(Note2)  
(Note2)  
(Note2)  
(Note2)  
10.5  
49  
S
fs  
D
I
I
I
I
= 2.0 A, V  
= 2.0 A, V  
= 1.0 A, V  
= 0.5 A, V  
= 4.0 V  
= 2.5 V  
= 1.8 V  
= 1.5 V  
D
D
D
D
GS  
GS  
GS  
GS  
59  
Drain–source ON-resistance  
R
mΩ  
DS (ON)  
73  
88  
Input capacitance  
C
400  
68  
iss  
Output capacitance  
Reverse transfer capacitance  
Total Gate Charge  
C
V
= 10 V, V = 0 V, f = 1 MHz  
GS  
⎯
pF  
nC  
oss  
DS  
C
⎯
60  
⎯
rss  
Q
g
⎯
⎯
⎯
⎯
⎯
⎯
5.9  
4.1  
1.8  
14  
⎯
⎯
⎯
⎯
⎯
– 1.2  
V
V
= 10 V, I = 2.8 A  
D
= 4 V  
DS  
GS  
Gate−Source Charge  
Gate−Drain Charge  
Q
gs  
Q
gd  
Turn-on time  
Switching time  
t
t
V
V
= 10 V, I = 2 A,  
= 0 to 2.5 V, R = 4.7 Ω  
on  
off  
DD  
GS  
D
ns  
V
Turn-off time  
15  
G
Drain–source forward voltage  
Note 2: Pulse test  
V
I
= − 2.8 A, V = 0 V  
GS  
(Note2)  
– 0.85  
DSF  
D
1
2007-11-01  
123456

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