Datasheet > SSM6K209FE

SSM6K209FE

更新时间： 2024-10-02 03:50:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
6页	187K
描述
High-Speed Switching Applications

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中文翻译

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数据手册

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SSM6K209FE 数据手册

SSM6K209FE

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6K209FE

○High-Speed Switching Applications

○Power Management Switch Applications

UNIT: mm

1.6±0.05

•

4.0V drive

Low ON-resistance: R = 145mΩ (max) (@V

= 4.0 V)

= 10 V)

1.2±0.05

74mΩ (max) (@V

Absolute Maximum Ratings (Ta = 25˚C)

Characteristic

Drain–source voltage

Symbol

Rating

Unit

± 20

2.5

DSS

Gate–source voltage

GSS

Drain current

Pulse

5.0

(Note 1)

Drain power dissipation

Channel temperature

Storage temperature

500

°C

150

stg

−55~150

°C

1, 2, 5, 6 : Drain

: Gate

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

: Source

ES6

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

TOSHIBA

2-2N1A

Weight: 3.0 mg (typ.)

Note 1: Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

= 1 mA, V

= 0 V

⎯

1.2

2.7

⎯

(BR) DSS

(BR) DSX

Drain–source breakdown voltage

= –20 V

Drain cutoff current

= 30 V, V

= 0 V

⎯

μA

DSS

Gate leakage current

Gate threshold voltage

Forward transfer admittance

= ± 16 V, V

= 0 V

⎯

±1

2.6

⎯

GSS

= 5 V, I = 1 mA

⎯

⏐Y ⏐

= 5 V, I = 1.5 A

(Note2)

5.3

= 1.5 A, V

= 10 V

= 4.0 V

145

⎯

Drain–source ON-resistance

mΩ

DS (ON)

= 1.0 A, V

Input capacitance

320

iss

= 15 V, V

= 0 V, f = 1 MHz

Output capacitance

Reverse transfer capacitance

Total Gate Charge

⎯

oss

⎯

rss

Q_g

7.7

6.0

1.7

⎯

= 15V, I = 2.5 A

Gate−Source Charge

Gate−Drain Charge

Q_gs

Q_gd

⎯

= 10 V

⎯

Turn-on time

Switching time

= 15 V, I = 1.0 A,

⎯

= 0~4.0 V, R = 10 Ω

Turn-off time

⎯

off

Drain–source forward voltage

Note 2: Pulse test

= –2.5 A, V = 0 V

(Note2)

-0.9

–1.2

DSF

2007-11-01

12 3 4 5 6

中文翻译

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与SSM6K209FE相关器件

型号	品牌	获取价格	描述	数据表
SSM6K210FE	TOSHIBA	获取价格	EOL announced
SSM6K211FE	TOSHIBA	获取价格	High-Speed Switching Applications Power Management Switch Applications
SSM6K211FE(TE85L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,3.2A I(D),SOT-363VAR
SSM6K211FE(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,3.2A I(D),SOT-363VAR
SSM6K211FE(TPL3)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,3.2A I(D),SOT-363VAR
SSM6K211FE(TPL3,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,3.2A I(D),SOT-363VAR
SSM6K217FE	TOSHIBA	获取价格	Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Junction FETs (Single/Dual) - Small-Signal
SSM6K22FE	TOSHIBA	获取价格	High Current Switching Applications
SSM6K22FE(TE85L)	TOSHIBA	获取价格	SSM6K22FE(TE85L)
SSM6K22FE(TE85L,F)	TOSHIBA	获取价格	SSM6K22FE(TE85L,F)

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