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SSM6K210FE PDF预览

SSM6K210FE

更新时间: 2024-11-19 14:56:35
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 245K
描述
EOL announced

SSM6K210FE 数据手册

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SSM6K210FE  
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type  
SSM6K210FE  
High-Speed Switching Applications  
Power Management Switch Applications  
Unit: mm  
4.0-V drive  
Low ON-resistance: R = 371 m(max) (@V  
= 4.0 V),  
= 10 V)  
on  
GS  
R
on  
= 228 m(max) (@V  
GS  
Absolute Maximum Ratings (Ta = 25˚C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
V
30  
±20  
V
V
DSS  
Gate-source voltage  
GSS  
DC  
I
1.4  
D
1.2.5.6 : Drain  
Drain current  
A
3.  
4.  
: Gate  
Pulse  
I
2.8  
DP  
: Source  
Drain power dissipation  
Channel temperature  
Storage temperature  
P
(Note1)  
500  
mW  
°C  
D
ES6  
T
150  
ch  
JEDEC  
JEITA  
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-2N1A  
Weight: 3 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)  
Marking  
Equivalent Circuit (top view)  
6
5
4
6
1
5
4
3
NP  
1
2
3
2
Start of commercial production  
2008-04  
1
2014-03-01  

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