Datasheet > SSM6K210FE

SSM6K210FE

更新时间： 2024-11-06 14:56:35

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东芝 - TOSHIBA		/
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数据手册

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SSM6K210FE 数据手册

SSM6K210FE

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6K210FE

○High-Speed Switching Applications

○Power Management Switch Applications

Unit: mm

•

4.0-V drive

Low ON-resistance: R = 371 mΩ (max) (@V

= 4.0 V),

= 10 V)

= 228 mΩ (max) (@V

Absolute Maximum Ratings (Ta = 25˚C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±20

DSS

Gate-source voltage

GSS

1.4

1.2.5.6 : Drain

Drain current

: Gate

Pulse

2.8

: Source

Drain power dissipation

Channel temperature

Storage temperature

(Note1)

500

°C

ES6

150

JEDEC

JEITA

―

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-2N1A

Weight: 3 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)

Marking

Equivalent Circuit (top view)

Start of commercial production

2008-04

2014-03-01

12 3 4 5 6

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