Datasheet > SSM6K22FE

SSM6K22FE

更新时间： 2024-11-05 03:50:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
6页	294K
描述
High Current Switching Applications

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数据手册

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SSM6K22FE 数据手册

SSM6K22FE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)

SSM6K22FE

High Current Switching Applications

Unit: mm

DC-DC Converter

•

Suitable for high-density mounting due to compact package

Low on resistance:

= 170 mΩ (max) (@V

= 230 mΩ (max) (@V

= 4.0 V)

= 2.5 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

±12

1.4

5.6

500

1,2,5,6 : Drain

Gate-Source voltage

GSS

: Gate

: Source

Drain current

Pulse

Drain power dissipation

Channel temperature

(Note 1)

JEDEC

JEITA

150

°C

Storage temperature range

stg

−55~150

TOSHIBA

2-2N1A

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

Weight: 3 mg (typ.)

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board.

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )

Marking

Equivalent Circuit (Top View)

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is

protected against static electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5 6

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