Datasheet > SSM6K211FE(TPL3)

SSM6K211FE(TPL3)

更新时间： 2024-10-03 05:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	197K
描述
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,3.2A I(D),SOT-363VAR

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中文翻译

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技术参数
数据手册

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SSM6K211FE(TPL3) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	3.2 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.5 W
子类别：	FET General Purpose Powers	表面贴装：	YES
Base Number Matches：	1

SSM6K211FE(TPL3) 数据手册

SSM6K211FE

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ)

SSM6K211FE

○High-Speed Switching Applications

○Power Management Switch Applications

Unit: mm

•

1.5-V drive

Low ON-resistance:

= 118 mΩ (max) (@V

= 1.5 V)

= 1.8 V)

= 2.5 V)

= 4.5 V)

82 mΩ (max) (@V

59 mΩ (max) (@V

47 mΩ (max) (@V

Absolute Maximum Ratings (Ta = 25˚C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

± 10

3.2

DSS

Gate-source voltage

GSS

Drain current

Pulse

6.4

1,2, 5, 6: Drain

Drain power dissipation

Channel temperature

Storage temperature

(Note 1)

500

150

°C

Gate

Source

ES6

stg

−55 to 150

°C

JEDEC

JEITA

―

Note:Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

TOSHIBA

2-2N1J

Weight: 3 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)

Marking

Equivalent Circuit (top view)

2008-11-21

12 3 4 5 6

中文翻译

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