Datasheet > SSM6K217FE

SSM6K217FE

更新时间： 2024-11-18 19:57:59

品牌	Logo	应用领域
东芝 - TOSHIBA		双极性晶体管开关光电二极管
页数	文件大小	规格书
9页	213K
描述
Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Junction FETs (Single/Dual) - Small-Signal MOSFETs(Single)

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SSM6K217FE 技术参数

SSM6K217FE

MOSFETs Silicon N-Channel MOS

SSM6K217FE

1. Applications

•

Power Management Switches

•

DC-DC Converters

2. Features

(1) 1.8-V gate drive voltage.

(2) Low drain-source on-resistance

: RDS(ON) = 155 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A)

RDS(ON) = 165 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A)

RDS(ON) = 170 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A)

RDS(ON) = 190 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A)

RDS(ON) = 230 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A)

3. Packaging and Pin Assignment

1: Drain

2: Drain

3: Gate

4: Source

5: Drain

6; Drain

ES6

Start of commercial production

2014-02

2014-03-12

Rev.1.0

12 3 4 5 6 7...9

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