Datasheet > SSM6K208FE

SSM6K208FE

更新时间： 2024-11-19 14:56:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	230K
描述
Not Recommended for New Design

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数据手册

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SSM6K208FE 数据手册

SSM6K208FE

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6K208FE

○High-Speed Switching Applications

○Power Management Switch Applications

Unit: mm

•

1.8V drive

Low ON-resistance:

= 296 mΩ (max) (@V

= 1.8 V)

= 2.5 V)

= 4.0 V)

= 177 mΩ (max) (@V

= 133 mΩ (max) (@V

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-Source voltage

Symbol

Rating

Unit

± 12

DSS

Gate-Source voltage

GSS

1.9

Drain current

1,2,5,6: Drain

Pulse

3.8

: Gate

ES6

Drain power dissipation

Channel temperature

(Note 1)

500

°C

: Source

150

Storage temperature range

−55 to 150

°C

stg

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

―

TOSHIBA

2-2N1A

Weight: 3mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board.

(25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 645 mm²)

Start of commercial production

2008-01

2014-03-01

12 3 4 5 6 7

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