Datasheet > SSM6K07FU_07

SSM6K07FU_07

更新时间： 2024-10-02 03:08:51

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器
页数	文件大小	规格书
6页	678K
描述
DC-DC Converters

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数据手册

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SSM6K07FU_07 数据手册

SSM6K07FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6K07FU

DC-DC Converters

High Speed Switching Applications

Unit: mm

•

Small package

Low on resistance: R = 130 mΩ max (@V

= 10 V)

= 4 V)

: R = 220 mΩ max (@V

•

Low input capacitance : C = 102 pF typ.

iss

: C = 22 pF typ.

rss

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±20

1.5

3.0

Gate-source voltage

GSS

Drain current

Pulse

Drain power dissipation

Channel temperature

300

(Note 1)

150

°C

JEDEC

JEITA

―

Storage temperature range

stg

−55~150

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

2-2J1D

Weight: 6.8 mg (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board.

(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 0.32 mm2 × 6)

Marking

Equivalent Circuit (top view)

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5 6

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