Datasheet > SSM6J801R

SSM6J801R

更新时间： 2024-10-03 14:57:55

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SSM6J801R 数据手册

SSM6J801R

MOSFETs Silicon P-Channel MOS (U-MOS)

SSM6J801R

1. Applications

•

Power Management Switches

2. Features

(1) 1.5 V gate drive voltage.

(2) Low drain-source on-resistance

: RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V)

RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V)

RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V)

RDS(ON) = 32.5 mΩ (max) (@VGS = -4.5 V)

3. Packaging and Pin Assignment

1, 2, 5, 6: Drain

3: Gate

4: Source

TSOP6F

Start of commercial production

2016-10

2016-12-19

Rev.3.0

12 3 4 5 6 7...9

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