Datasheet > SSM6K06FU(TE85L)

SSM6K06FU(TE85L)

更新时间： 2024-10-02 21:14:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	361K
描述
SSM6K06FU(TE85L)

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中文翻译

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技术参数
数据手册

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SSM6K06FU(TE85L) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.81
Base Number Matches：	1

SSM6K06FU(TE85L) 数据手册

SSM6K06FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6K06FU

High Speed Switching Applications

Unit: mm

•

Small package

Low ON- resistance: R_DS(ON)= 160 mΩ max (@V

= 4 V)

: R_DS(ON)= 210 mΩ max (@V

= 2.5 V)

•

Low gate threshold voltage

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±12

1.1

2.2

Gate-source voltage

GSS

Drain current

Pulse

Drain power dissipation (Ta = 25°C)

300

(Note 1)

Channel temperature

150

°C

JEDEC

JEITA

―

Storage temperature range

stg

−55 to 150

TOSHIBA

2-2J1D

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

Weight: 6.8 mg (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.32 mm²× 6) Figure 1.

Marking

Equivalent Circuit (top view)

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2009-10-07

12 3 4 5 6

中文翻译

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