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SSM6H19NU PDF预览

SSM6H19NU

更新时间: 2024-11-14 14:58:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 297K
描述
40 V/2 A N-ch MOS + SBD, SOT-1118(UDFN6)

SSM6H19NU 数据手册

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SSM6H19NU  
Composite Devices Silicon N-Channel MOS/Epitaxial Schottky Barrier  
SSM6H19NU  
1. Applications  
DC-DC Converters  
2. Features  
(1) N-channel MOSFET and a schottky barrier diode in one package.  
2.1. MOSFET Features  
(1) Low drain-source on-resistance  
: RDS(ON) = 160 m(typ.) (@VGS = 3.6 V)  
(2) 1.8-V gate drive voltage.  
2.2. Diode Features  
(1) Low forward voltage: VF = 0.51 V (typ.) (@IF = 500 mA)  
3. Packaging and Internal Circuit  
1.Anode  
2.N.C.  
3.Drain  
4.Source  
5.Gate  
6.Cathode  
UDFN6  
4. Absolute Maximum Ratings (Note)  
4.1. Absolute Maximum Ratings of the MOSFET  
(Unless otherwise specified, Ta = 25 )  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
VDSS  
VGSS  
ID  
40  
±12  
2.0  
4.0  
150  
Drain current  
(Note 1)  
(Note 1)  
A
Drain current (pulsed)  
Channel temperature  
IDP  
Tch  
Note 1: Ensure that the channel temperature does not exceed 150 .  
Start of commercial production  
2013-12  
©2021  
Toshiba Electronic Devices & Storage Corporation  
2021-09-17  
Rev.3.0  
1

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