Datasheet > SSM6H19NU

SSM6H19NU

更新时间： 2024-11-14 14:58:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	297K
描述
40 V/2 A N-ch MOS + SBD, SOT-1118(UDFN6)

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SSM6H19NU 数据手册

SSM6H19NU

Composite Devices Silicon N-Channel MOS/Epitaxial Schottky Barrier

SSM6H19NU

1. Applications

•

DC-DC Converters

2. Features

(1) N-channel MOSFET and a schottky barrier diode in one package.

2.1. MOSFET Features

(1) Low drain-source on-resistance

: RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V)

(2) 1.8-V gate drive voltage.

2.2. Diode Features

(1) Low forward voltage: VF = 0.51 V (typ.) (@IF = 500 mA)

3. Packaging and Internal Circuit

1.Anode

2.N.C.

3.Drain

4.Source

5.Gate

6.Cathode

UDFN6

4. Absolute Maximum Ratings (Note)

4.1. Absolute Maximum Ratings of the MOSFET

(Unless otherwise specified, Ta = 25 �)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

VDSS

VGSS

±12

2.0

4.0

150

Drain current

(Note 1)

Drain current (pulsed)

Channel temperature

IDP

Tch

�

Note 1: Ensure that the channel temperature does not exceed 150 �.

Start of commercial production

2013-12

Toshiba Electronic Devices & Storage Corporation

2021-09-17

Rev.3.0

12 3 4 5 6 7...10

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