Datasheet > SSM6J07FU_07

SSM6J07FU_07

更新时间： 2024-11-13 03:08:51

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	180K
描述
Power Management Switch

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中文翻译

获取价格

数据手册

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SSM6J07FU_07 数据手册

SSM6J07FU

TOSHIBA Transistor Silicon P Channel MOS Type

SSM6J07FU

Power Management Switch

Unit: mm

High Speed Switching Applications

•

Small package

Low on resistance

: R = 450 mΩ (max) (V

= −10 V)

= −4 V)

: R = 800 mΩ (max) (V

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−30

±20

Gate-source voltage

GSS

−0.8

Drain current

Pulse

−1.6

Drain power dissipation

Channel temperature

(Note 1)

300

°C

150

JEDEC

JEITA

―

Storage temperature range

−55~150

°C

stg

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-2J1D

Weight: 6.8 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6)

Marking

Equivalent Circuit

(top view)

Figure 1: 25.4 mm × 25.4 mm × 1.6 t,

Cu Pad: 0.32 mm

²× 6

K D F

0.4 mm

2007-11-01

12 3 4 5

中文翻译

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