Datasheet > SSM6J25FE(TPL3)

SSM6J25FE(TPL3)

更新时间： 2024-11-13 15:52:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
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SSM6J25FE(TPL3)

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SSM6J25FE(TPL3) 技术参数

生命周期：	Lifetime Buy	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

SSM6J25FE(TPL3) 数据手册

SSM6J25FE

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

SSM6J25FE

High Speed Switching Applications

Unit: mm

•

Optimum for high-density mounting in small packages

1.6±0.05

1.2±0.05

Low on-resistance:

= 260mΩ (max) (@V

= 430mΩ (max) (@V

= -4 V)

= -2.5 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

-20

± 12

-0.5

-1.5

Gate-Source voltage

GSS

Drain current

Pulse

Drain power dissipation

Channel temperature

500

1,2,5,6 :Drain

3 :Gate

4 :Source

(Note 1)

150

°C

ES6

Storage temperature range

stg

−55~150

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

―

TOSHIBA

2-2N1A

Weight: 3.0 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board.

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )

Marking

Equivalent Circuit (top view)

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5

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