SSM6J26FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
SSM6J26FE
High Speed Switching Applications
Unit: mm
•
•
Optimum for high-density mounting in small packages
1.6±0.05
1.2±0.05
Low on-resistance:
R
on
R
on
R
on
= 230mΩ (max) (@V
= 330mΩ (max) (@V
= 980mΩ (max) (@V
= -4 V)
GS
GS
GS
= -2.5 V)
= -1.8 V)
1
2
6
5
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
4
3
V
-20
± 8
V
V
DS
Gate-Source voltage
V
GSS
DC
I
-0.5
-1.5
D
Drain current
A
Pulse
I
DP
1,2,5,6 :Drain
3 :Gate
4 :Source
P
D
Drain power dissipation
Channel temperature
500
mW
(Note 1)
ES6
T
ch
150
°C
°C
Storage temperature range
T
stg
−55~150
JEDEC
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
―
TOSHIBA
2-2N1A
Weight: 3.0 mg (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
2
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
PI
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01