Datasheet > SSM6J422TU

SSM6J422TU

更新时间： 2024-09-27 14:58:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	286K
描述
P-ch MOSFET, -20 V, -4.0 A, 0.0427 Ω@4.5V, SOT-363F(UF6)

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中文翻译

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技术参数
数据手册

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SSM6J422TU 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.72	Base Number Matches：	1

SSM6J422TU 数据手册

SSM6J422TU

MOSFETs Silicon P-Channel MOS (U-MOS�)

SSM6J422TU

1. Applications

•

Power Management Switches

2. Features

(1) AEC-Q101 qualified (Please see the orderable part number list)

(2) 1.5-V gate drive voltage.

(3) Low drain-source on-resistance

: RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V)

RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V)

RDS(ON) = 51.4 mΩ (max) (@VGS = -2.5 V)

RDS(ON) = 42.7 mΩ (max) (@VGS = -4.5 V)

3. Packaging and Pin Configuration

1, 2, 5, 6: Drain

3: Gate

4: Source

UF6

4. Orderable part number

Orderable part number

AEC-Q101

Note

SSM6J422TU,LF

ꢀ

General Use

SSM6J422TU,LXGF

SSM6J422TU,LXHF

YES

(Note 1)

Unintended Use

Automotive Use

(Note 1)

Note 1: For more information, please contact our sales or use the inquiry form on our website.

Toshiba Electronic Devices & Storage Corporation

2021-05-28

Rev.2.0

12 3 4 5 6 7...9

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