Datasheet > SSM6J424TU

SSM6J424TU

更新时间： 2024-11-14 14:58:23

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SSM6J424TU 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.72	Base Number Matches：	1

SSM6J424TU

MOSFETs Silicon P-Channel MOS (U-MOS)

SSM6J424TU

1. Applications

•

Power Management Switches

2. Features

(1) AEC-Q101 qualified (Note 1)

(2) 1.5-V gate drive voltage.

(3) Low drain-source on-resistance

: RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V)

RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V)

RDS(ON) = 26 mΩ (max) (@VGS = -2.5 V)

RDS(ON) = 22.5 mΩ (max) (@VGS = -4.5 V)

Note 1: For detail information, please contact to our sales.

3. Packaging and Pin Configuration

1, 2, 5, 6: Drain

3: Gate

4: Source

UF6

2018-03-27

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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