SSM6J212FE

更新时间： 2024-01-06 14:01:39

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
6页	190K
描述
Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)

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中文翻译

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技术参数
数据手册

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SSM6J212FE 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.65
Base Number Matches：	1

SSM6J212FE 数据手册

SSM6J212FE

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)

SSM6J212FE

○Power Management Switch Applications

Unit: mm

•

1.5-V drive

Low ON-resistance:

= 94.0 mΩ (max) (@V

= 65.4 mΩ (max) (@V

= -1.5 V)

= -1.8 V)

DS(ON)

= 49.0 mΩ (max) (@V

= 40.7 mΩ (max) (@V

= -2.5 V)

= -4.5 V)

DS(ON)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

-20

Unit

DSS

GSS

Gate-source voltage

± 8

(Note 1)

(Note 2)

t = 10s

-4.0

Drain current

Pulse

-8.0

1,2,5,6 ： Drain

500

Drain power dissipation

： Gate

700

： Source

ES6

Channel temperature

150

°C

Storage temperature range

stg

−55 to 150

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-2N1J

Weight : 3mg ( typ. )

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: The channel temperature should not exceed 150°C during use.

Note 2: Mounted on a FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)

Marking (Top View)

Equivalent Circuit

2009-12-09

12 3 4 5 6

中文翻译

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