SSM6J23FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
SSM6J23FE
High Current Switching Applications
Unit: mm
DC-DC Converter
•
•
Suitable for high-density mounting due to compact package
Low on-resistance:
R
R
= 160 mΩ (max) (@V
= 210 mΩ (max) (@V
= -4.0 V)
= -2.5 V)
on
GS
on
GS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
-12
±8
V
V
DS
1,2,5,6 : Drain
3
: Gate
Gate-Source voltage
V
GSS
4
: Source
DC
I
-1.2
-4.8
D
Drain current
A
Pulse
I
DP
JEDEC
JEITA
-
P
D
Drain power dissipation
Channel temperature
500
mW
(Note 1)
-
T
ch
150
°C
°C
TOSHIBA
2-2N1A
Storage temperature range
T
stg
−55~150
Weight: 3 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Marking
Equivalent Circuit
6
5
KE
2
4
6
1
5
4
3
1
3
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and
other objects that are made of anti-static materials.
1
2007-11-01