Datasheet > SSM6J23FE(TE85L)

SSM6J23FE(TE85L)

更新时间： 2024-01-18 23:46:17

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东芝 - TOSHIBA		/
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SSM6J23FE(TE85L)

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SSM6J23FE(TE85L) 技术参数

生命周期：	End Of Life	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

SSM6J23FE(TE85L) 数据手册

SSM6J23FE

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)

SSM6J23FE

High Current Switching Applications

Unit: mm

DC-DC Converter

•

Suitable for high-density mounting due to compact package

Low on-resistance:

= 160 mΩ (max) (@V

= 210 mΩ (max) (@V

= -4.0 V)

= -2.5 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

-12

±8

1,2,5,6 : Drain

: Gate

Gate-Source voltage

GSS

: Source

-1.2

-4.8

Drain current

Pulse

JEDEC

JEITA

Drain power dissipation

Channel temperature

500

(Note 1)

150

°C

TOSHIBA

2-2N1A

Storage temperature range

stg

−55~150

Weight: 3 mg (typ.)

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board.

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )

Marking

Equivalent Circuit

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment

is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and

other objects that are made of anti-static materials.

2007-11-01

12 3 4 5 6

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