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SSM6J205FE(TE85L,F)

更新时间： 2024-11-13 21:18:23
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东芝 - TOSHIBA /
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SSM6J205FE(TE85L,F)

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SSM6J205FE(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.84Base Number Matches：1

SSM6J205FE(TE85L,F) 数据手册

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SSM6J205FE  
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type  
SSM6J205FE  
High-Speed Switching Applications  
Power Management Switch Applications  
Unit: mm  
•
•
•
1.8V drive  
P-ch 2-in-1  
Low ON-resistance:  
R
on  
R
on  
R
on  
= 460 mΩ (max) (@V  
= 306 mΩ (max) (@V  
= 234 mΩ (max) (@V  
= −1.8 V)  
= −2.5 V)  
= −4.0 V)  
GS  
GS  
GS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
−20  
± 8  
V
V
DS  
Gate-source voltage  
V
GSS  
DC  
I
−0.8  
D
Drain current  
A
Pulse  
I
−1.6  
DP  
Drain power dissipation  
Channel temperature  
P
500  
mW  
°C  
D (Note 1)  
T
150  
1, 2, 5, 6 : Drain  
ch  
Storage temperature range  
T
−55 to 150  
°C  
3
4
: Gate  
stg  
: Source  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
ES6  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-2N1A  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Weight: 3 mg (typ.)  
Note 1: Mounted on an FR4 board (total dissipation)  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Conditions  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
= − 1 mA, V  
= − 1 mA, V  
= 0  
− 20  
− 12  
⎯
⎯
⎯
⎯
⎯
⎯
(BR) DSS  
(BR) DSX  
D
D
GS  
Drain-source breakdown voltage  
= + 8 V  
GS  
Drain cutoff current  
I
V
V
V
V
= − 20 V, V  
= 0  
− 10  
μA  
μA  
V
DSS  
DS  
GS  
DS  
DS  
GS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ± 8 V, V  
= 0  
⎯
− 0.3  
1.5  
⎯
⎯
± 1  
− 1.0  
⎯
GSS  
DS  
V
= − 3 V, I = − 1 mA  
D
th  
⏐Y ⏐  
= − 3 V, I = − 0.6 A  
(Note 2)  
(Note 2)  
2.5  
175  
S
fs  
D
I
= − 0.6 A, V  
= − 4.0 V  
⎯
234  
D
GS  
Drain-source ON-resistance  
R
mΩ  
DS (ON)  
I
I
= − 0.4 A, V  
= − 0.1 A, V  
= − 2.5 V  
= − 1.8 V  
(Note 2)  
(Note 2)  
⎯
⎯
230  
300  
306  
460  
D
D
GS  
GS  
Input capacitance  
C
V
V
V
= − 10 V, V  
= − 10 V, V  
= − 10 V, V  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
⎯
⎯
⎯
⎯
250  
45  
⎯
⎯
⎯
pF  
pF  
iss  
DS  
DS  
DS  
GS  
GS  
GS  
Output capacitance  
C
oss  
pF  
ns  
V
Reverse transfer capacitance  
C
35  
rss  
Turn-on time  
t
t
V
V
= − 10 V, I = − 0.25 A,  
12  
18  
⎯
⎯
on  
off  
DD  
GS  
D
Switching time  
= 0 to − 2.5 V, R = 4.7 Ω  
G
Turn-off time  
⎯
⎯
Drain-source forward voltage  
V
I
= 0.8 A, V = 0 V  
GS  
(Note 2)  
0.85  
1.2  
DSF  
D
Note 2: Pulse test  
1
2007-11-01  
12345

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