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SSM6J207FE(TE85L,F) PDF预览

SSM6J207FE(TE85L,F)

更新时间： 2024-01-27 21:09:21
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 184K
描述
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,1.4A I(D),TSOP

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SSM6J207FE(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
风险等级：5.61配置：Single
最大漏极电流 (Abs) (ID)：1.4 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：0.5 W
子类别：Other Transistors表面贴装：YES
Base Number Matches：1

SSM6J207FE(TE85L,F) 数据手册

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SSM6J207FE  
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type  
SSM6J207FE  
○High-Speed Switching Applications  
Unit: mm  
•
•
4 V drive  
Low ON-resistance:  
R
R
= 491 mΩ (max) (@V  
= 251 mΩ (max) (@V  
= −4 V)  
on  
GS  
GS  
= −10 V)  
on  
Absolute Maximum Ratings (Ta = 25˚C)  
Characteristic  
Drain–source voltage  
Symbol  
Rating  
Unit  
V
-30  
± 20  
V
V
DS  
Gate–source voltage  
V
GSS  
DC  
I
-1.4  
D
Drain current  
A
Pulse  
I
-2.8  
DP  
P
(Note 1)  
Drain power dissipation  
Channel temperature  
Storage temperature  
500  
mW  
°C  
D
T
ch  
150  
T
stg  
−55 to 150  
°C  
1, 2, 5, 6 : Drain  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
3
4
: Gate  
: Source  
ES6  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-2N1A  
Weight: 3 mg (typ.)  
Note 1: Mounted on an FR4 board  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
I
= −1 mA, V  
= −1 mA, V  
= 0  
−30  
−15  
⎯
⎯
⎯
⎯
⎯
⎯
−1  
(BR) DSS  
(BR) DSX  
D
D
GS  
Drain–source breakdown voltage  
V
V
= + 20 V  
GS  
Drain cutoff current  
I
V
V
V
V
= −30 V, V  
= 0  
= 0  
μA  
μA  
V
DSS  
DS  
GS  
DS  
DS  
GS  
DS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ±16 V, V  
⎯
−1.2  
0.8  
⎯
⎯
±1  
−2.6  
⎯
GSS  
V
= −5 V, I = −1 mA  
D
th  
⏐Y ⏐  
= −5 V, I =− 0.65 A  
(Note 2)  
1.5  
S
fs  
D
I
I
= −0.65 A, V  
= −10 V  
(Note 2)  
(Note 2)  
⎯
⎯
⎯
191  
371  
137  
251  
491  
⎯
D
D
GS  
Drain–source ON-resistance  
R
mΩ  
DS (ON)  
= −0.4 A, V  
= −4 V  
GS  
Input capacitance  
C
V
V
V
= −15 V, V  
= −15 V, V  
= −15 V, V  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
pF  
pF  
iss  
DS  
DS  
DS  
GS  
GS  
GS  
Output capacitance  
C
⎯
⎯
⎯
⎯
⎯
39  
20  
⎯
⎯
⎯
oss  
pF  
ns  
V
Reverse transfer capacitance  
C
rss  
on  
Turn-on time  
Switching time  
t
t
15  
V
V
= −15 V, I = −0.65 A,  
D
DD  
GS  
= 0 to −4 V, R = 10 Ω  
G
Turn-off time  
14  
⎯
off  
Drain–source forward voltage  
Note 2: Pulse test  
V
I
= 1.4 A, V = 0 V  
GS  
(Note 2)  
0.85  
1.2  
DSF  
D
1
2007-11-01  
12345

中文翻译

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