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SSM6J06FU PDF预览

SSM6J06FU

更新时间: 2024-11-12 22:20:39
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
6页 193K
描述
Power Management Switch High Speed Switching Applications

SSM6J06FU 技术参数

生命周期:Obsolete包装说明:2-2J1D, US6, 6 PIN
针数:6Reach Compliance Code:unknown
风险等级:5.82其他特性:LOW THRESHOLD
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):0.65 A最大漏源导通电阻:0.7 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SSM6J06FU 数据手册

 浏览型号SSM6J06FU的Datasheet PDF文件第2页浏览型号SSM6J06FU的Datasheet PDF文件第3页浏览型号SSM6J06FU的Datasheet PDF文件第4页浏览型号SSM6J06FU的Datasheet PDF文件第5页浏览型号SSM6J06FU的Datasheet PDF文件第6页 
                                                        
                                                        
SSM6J06FU  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type  
SSM6J06FU  
Power Management Switch  
High Speed Switching Applications  
Unit: mm  
·
·
Small package  
Low on resistance : Ron = 0.5 max (V  
: Ron = 0.7 max (V  
= 4 V)  
= 2.5 V)  
GS  
GS  
·
Low gate threshold voltage  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
Gate-source voltage  
V
-20  
±12  
V
V
DS  
V
GSS  
DC  
Drain current  
I
-650  
-1300  
D
mA  
Pulse  
I
DP  
P
D
Drain power dissipation (Ta = 25°C)  
300  
mW  
JEDEC  
JEITA  
(Note 1)  
Channel temperature  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
-55~150  
stg  
TOSHIBA  
2-2J1D  
Weight: 6.8 mg (typ.)  
Note 1: Mounted on FR4 board.  
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.32 mm2 ´ 6) Figure 1.  
Marking  
Equivalent Circuit  
Handling Precaution  
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment  
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other  
objects that come into direct contact with devices should be made of anti-static materials.  
1
2003-03-28  

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