Datasheet > SSM6923O

SSM6923O

更新时间： 2024-11-13 06:14:07

品牌	Logo	应用领域
SSC		肖特基二极管
页数	文件大小	规格书
5页	416K
描述
P-CHANNEL POWER MOSFET WITH SCHOTTKY DIODE

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数据手册

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SSM6923O 数据手册

SSM6923O

P-CHANNEL POWER MOSFET WITH SCHOTTKY DIODE

P-channel MOSFET

Low on-resistance

BV_DSS

-20V

Fast switching characteristics

Surface-mount package

_DS(ON)@ 4.5V 50mW

I_D

-3.5A

TSSOP-8

Schottky Diode

V_KA

20V

V_f@ 0.5V

I_F

Description

1.5A

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

-20

Units

V_DS

V_KA

V_GS

Drain-Source Voltage (MOSFET and Schottky)

Reverse Voltage (Schottky)

Gate-Source Voltage (MOSFET)

Continuous Drain Current³(MOSFET)

Pulsed Drain Current^1,2(MOSFET)

± 12

- 3.5

- 2.8

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

- 30

I_F

Average Forward Current (Schottky)

Pulsed Forward Current (Schottky)

Total Power Dissipation (MOSFET)

Linear Derating Factor (MOSFET)

Total Power Dissipation (Schottky)

Linear Derating Factor (Schottky)

Storage Temperature Range

I_FM

P_D@ T_A=25°C

W/°C

°C

T_STG

T_J

-55 to 150

Operating Junction Temperature Range

-55 to 125

°C

Thermal Data

Symbol

Parameter

Value

125

Unit

°C/W

Rthj-a

Max.

Thermal Resistance Junction-ambient (MOSFET)

Thermal Resistance Junction-ambient (Schottky)

125

Rev.2.02 1/29/2004

www.SiliconStandard.com

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