SSM3J36FS,LF(T

更新时间： 2024-11-16 13:14:03

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关小信号场效应晶体管光电二极管
页数	文件大小	规格书
5页	185K
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中文翻译

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SSM3J36FS,LF(T 数据手册

SSM3J36FS

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J36FS

○Power Management Switches

•

1.5-V drive

Unit: mm

Low ON-resistance: R = 3.60 Ω (max) (@V

= -1.5 V)

= -1.8 V)

= -2.8 V)

= -4.5 V)

: R = 2.70 Ω (max) (@V

: R = 1.60 Ω (max) (@V

: R = 1.31 Ω (max) (@V

Absolute Maximum Ratings (Ta = 25 °C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

-20

±8

DSS

Gate-source voltage

GSS

-330

Drain current

Pulse

-660

Drain power dissipation

Channel temperature

(Note1)

150

°C

150

stg

−55 to 150

°C

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-2H1B

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

Weight: 2.4 mg (typ.)

etc).

Note1: Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 0.36 mm²×3)

Marking

Equivalent Circuit (top view)

P X

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is

protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come

into direct contact with devices should be made of anti-static materials.

Usage Considerations

Let V be the voltage applied between gate and source that causes the drain current (I ) to below −1 mA for the

SSM3J36FS). Then, for normal switching operation, V

must be higher than V and V

must be lower than

GS(off)

GS(on)

th,

This relationship can be expressed as: V < V < V

GS(off) th GS(on).

th.

Take this into consideration when using the device.

2008-06-11

12 3 4 5

中文翻译

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与SSM3J36FS,LF(T相关器件

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