Datasheet > SMBT4126

SMBT4126

更新时间： 2024-09-15 22:50:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管
页数	文件大小	规格书
4页	100K
描述
PNP Silicon Switching Transistor

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中文翻译

获取价格

数据手册

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SMBT4126 数据手册

PNP Silicon Switching Transistor

SMBT 4126

● High current gain: 0.1 mA to 100 mA

● Low collector-emitter saturation voltage

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

SMBT 4126

sC3

Q68000-A8549

SOT-23

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CE0

CB0

EB0

200

330

150

˚C

tot

Total power dissipation, T

= 71 ˚C

Junction temperature

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 310

≤ 240

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

5.91

Semiconductor Group

12 3 4

中文翻译

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