Datasheet > SMBT772SS

SMBT772SS

更新时间： 2024-11-25 09:20:27

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	2699K
描述
PNP Epitaxial Planar Transistor

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技术参数
数据手册

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SMBT772SS 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

SMBT772SS 数据手册

SMBT772SS

-3 A, -40 V

PNP Epitaxial Planar Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SMBT772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and

voltage regulator.

FEATURES

High current output up to -3 A

Low saturation voltage

PACKAGE DIMENSIONS

SC-59

Dim

Min

2.70

1.30

1.00

0.35

Max

3.10

1.70

1.30

0.50

Top View

1.90 REF.

0.00

0.10

0.20

0.85

2.25

0.10

0.26

0.60

1.15

3.00

All Dimension in mm

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-40

-30

-5

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

-3

Total Power Dissipation

Junction, Storage Temperature

750

℃

T_J, T_STG

+150, -55 ~ +150

CHARACTERISTICS at Ta = 25°C

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BV_CBO

-40

-30

-5

I_C=-100uA, I_E= 0

I_C=-1mA, I_B= 0

BV_CEO

BV_EBO

I_CBO

I_E=-10uA, I_C= 0

V_CB=-30V, I_E= 0

V_EB=-3V, I_C= 0

-1

-0.5

-2.0

I_EBO

*V_CE(sat)

*V_BE(sat)

*h_FE1

*h_FE2

f_T

I_C=-2A, I_B=-200mA

V_CE=-2V, I_C=-20mA

V_CE=-2V, I_C=-1A

-1.0

100

500

MHz

V_CE=-5V, I_C=-100mA, f=100MHz

V_CB=-10V, f=-1MHz

Cob

* Pulse Test: Pulse Width≦380us, Duty Cycle≦2%

CLASSIFICATION OF hFE2

Rank

Range

100 - 200

160 - 320

200 - 500

01-June-2002 Rev. A

Page 1 of 3

12 3

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