Datasheet > SMBT3904UPNE6327

SMBT3904UPNE6327

更新时间： 2024-11-26 15:51:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	857K
描述
Small Signal Bipolar Transistor, 0.2A I(C), NPN and PNP

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中文翻译

获取价格

技术参数
数据手册

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SMBT3904UPNE6327 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.78	Base Number Matches：	1

SMBT3904UPNE6327 数据手册

SMBT3904...MMBT3904

NPN Silicon Switching Transistors

• High DC current gain: 0.1 mA to 100 mA

• Low collector-emitter saturation voltage

• For SMBT3904S:

Two (galvanic) internal isolated transistors

with good matching in one package

• Complementary types: SMBT3906... MMBT3906

• SMBT3904S: For orientation in reel

see package information below

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type

Marking

s1A

Pin Configuration

1=B 2=E 3=C

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Package

SOT23

SMBT3904/MMBT3904

SMBT3904S

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Symbol

Value

200

Unit

CEO

CBO

EBO

Total power dissipation-

tot

T ≤ 71°C, SOT23, SMBT3904

330

250

150

T ≤ 115°C, SOT363, SMBT3904S

°C

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

Unit

K/W

thJS

SMBT3904/MMBT3904

SMBT3904S

≤ 240

≤ 140

For calculation of R

please refer to Application Note AN077 (Thermal Resistance Calculation)

thJA

2012-08-21

12 3 4 5 6 7...11

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