5秒后页面跳转
SMBT3906DW3T1G PDF预览

SMBT3906DW3T1G

更新时间: 2024-11-27 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 小信号双极晶体管
页数 文件大小 规格书
6页 104K
描述
Dual PNP Bipolar Transistor

SMBT3906DW3T1G 数据手册

 浏览型号SMBT3906DW3T1G的Datasheet PDF文件第2页浏览型号SMBT3906DW3T1G的Datasheet PDF文件第3页浏览型号SMBT3906DW3T1G的Datasheet PDF文件第4页浏览型号SMBT3906DW3T1G的Datasheet PDF文件第5页浏览型号SMBT3906DW3T1G的Datasheet PDF文件第6页 
MBT3906DW1T1  
Dual General Purpose  
Transistor  
The MBT3906DW1T1 device is a spin−off of our popular  
SOT−23/SOT−323 three−leaded device. It is designed for general  
purpose amplifier applications and is housed in the SOT−363  
six−leaded surface mount package. By putting two discrete devices in  
one package, this device is ideal for low−power surface mount  
applications where board space is at a premium.  
http://onsemi.com  
(3)  
(2)  
(1)  
Q
Features  
Q
h , 100−300  
1
2
FE  
Low V , 0.4 V  
CE(sat)  
Simplifies Circuit Design  
Reduces Board Space  
(4)  
(5)  
(6)  
Reduces Component Count  
Available in 8 mm, 7−inch/3,000 Unit Tape and Reel  
Pb−Free Package is Available  
1
MAXIMUM RATINGS  
SOT−363/SC−88  
CASE 419B  
STYLE 1  
Rating  
Symbol  
Value  
−40  
Unit  
Vdc  
Vdc  
Vdc  
mAdc  
V
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
−40  
CBO  
EBO  
V
−5.0  
−200  
MARKING DIAGRAM  
Collector Current − Continuous  
Electrostatic Discharge  
I
C
ESD  
HBM>16000,  
MM>2000  
6
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
d
A2  
1
THERMAL CHARACTERISTICS  
A2 = Device Code  
d
Characteristic  
Symbol  
Max  
Unit  
= Date Code  
Total Package Dissipation (Note 1)  
P
D
150  
mW  
T = 25°C  
A
ORDERING INFORMATION  
Thermal Resistance,  
Junction−to−Ambient  
R
833  
°C/W  
°C  
q
JA  
Device  
MBT3906DW1T1  
Package  
Shipping  
SOT−363  
3000 Units/Reel  
3000 Units/Reel  
Junction and Storage  
Temperature Range  
T , T  
J
55 to +150  
stg  
MBT3906DW1T1G SOT−363  
(Pb−Free)  
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum  
recommended footprint.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
January, 2005 − Rev. 1  
MBT3906DW1T1/D  
 

与SMBT3906DW3T1G相关器件

型号 品牌 获取价格 描述 数据表
SMBT3906E6327 INFINEON

获取价格

PNP Silicon Switching Transistors
SMBT3906E6327 ROCHESTER

获取价格

200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR
SMBT3906E6327HTSA1 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,
SMBT3906E6327XT INFINEON

获取价格

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,
SMBT3906E6433 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,
SMBT3906L3-E6327 INFINEON

获取价格

Transistor
SMBT3906S INFINEON

获取价格

PNP Silicon Switching Transistor Array
SMBT3906SE6327 INFINEON

获取价格

Transistor
SMBT3906S-E6433 INFINEON

获取价格

Transistor
SMBT3906SH6327XTSA1 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, GREEN P