Datasheet > SMBT3906E6433

SMBT3906E6433

更新时间： 2024-11-27 03:04:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	882K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,

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SMBT3906E6433 数据手册

SMBT3906...MMBT3906

PNP Silicon Switching Transistors

• High DC current gain: 0.1 mA to 100 mA

• Low collector-emitter saturation voltage

• For SMBT3906S and SMBT3906U:

Two (galvanic) internal isolated transistor

with good matching in one package

• Complementary types:

SMBT3904...MMBT3904 (NPN)

• SMBT3904S / U: for orientation in reel

see package information below

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

SMBT3906S/U

TR2

TR1

EHA07175

Type

Marking

s2A

Pin Configuration

1=B 2=E 3=C

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

Package

SOT23

SMBT3906/ MMBT3906

SMBT3906S

SMBT3906U

s2A

¹Pb-containing package may be available upon special request

2008-02-29

12 3 4 5 6 7...13

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