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SMBT3946DW1T1G PDF预览

SMBT3946DW1T1G

更新时间: 2024-11-27 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管小信号双极晶体管
页数 文件大小 规格书
12页 172K
描述
NPN PNP Bipolar Transistor

SMBT3946DW1T1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:8 weeks风险等级:1.52
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.15 W
参考标准:AEC-Q101子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):250 ns最大开启时间(吨):70 ns
Base Number Matches:1

SMBT3946DW1T1G 数据手册

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MBT3946DW1T1  
Dual General Purpose  
Transistor  
The MBT3946DW1T1 device is a spin−off of our popular  
SOT−23/SOT−323 three−leaded device. It is designed for general  
purpose amplifier applications and is housed in the SOT−363−6  
surface mount package. By putting two discrete devices in one  
package, this device is ideal for low−power surface mount  
applications where board space is at a premium.  
http://onsemi.com  
(3)  
(2)  
(1)  
Q
h , 100−300  
FE  
Q
Low V , 0.4 V  
CE(sat)  
1
2
Simplifies Circuit Design  
Reduces Board Space  
(4)  
(5)  
(6)  
Reduces Component Count  
Available in 8 mm, 7−inch/3,000 Unit Tape and Reel  
Device Marking: MBT3946DW1T1 = 46  
MBT3946DW1T1*  
*Q1 PNP  
Q2 NPN  
Pb−Free Package May be Available. The G−Suffix Denotes a  
Pb−Free Lead Finish  
6
5
4
MAXIMUM RATINGS  
1
2
3
Rating  
Symbol  
Value  
Unit  
CollectorEmitter Voltage  
V
V
V
Vdc  
CEO  
CBO  
EBO  
SOT−363−6/SC−88  
CASE 419B  
Style 1  
(NPN)  
(PNP)  
40  
−40  
CollectorBase Voltage  
Vdc  
Vdc  
mAdc  
V
(NPN)  
(PNP)  
60  
−40  
MARKING  
DIAGRAM  
EmitterBase Voltage  
(NPN)  
(PNP)  
6.0  
−5.0  
Collector Current − Continuous  
I
C
(NPN)  
(PNP)  
200  
−200  
d
46  
Electrostatic Discharge  
ESD  
HBM>16000,  
MM>2000  
46 = Specific Device Code  
THERMAL CHARACTERISTICS  
Characteristic  
d
= Date Code  
Symbol  
Max  
Unit  
Total Package Dissipation (Note 1)  
P
D
150  
mW  
T = 25°C  
A
ORDERING INFORMATION  
Thermal Resistance  
Junction−to−Ambient  
R
833  
°C/W  
°C  
q
JA  
Device  
Package  
Shipping  
MBT3946DW1T1 SOT−363 3000/Tape & Reel  
MBT3946DW1T1G SOT−363 3000/Tape & Reel  
Junction and Storage  
Temperature Range  
T , T  
J
55 to +150  
stg  
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum  
recommended footprint.  
MBT3946DW1T2 SOT−363 3000/Tape & Reel  
MBT3946DW1T2G SOT−363 3000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
January, 2004 − Rev. 2  
MBT3946DW1T1/D  
 

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