Datasheet > SMBT3906S-E6433

SMBT3906S-E6433

更新时间： 2024-11-27 07:06:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	270K
描述
Transistor

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中文翻译

获取价格

数据手册

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SMBT3906S-E6433 数据手册

SMBT3906...MMBT3906

PNP Silicon Switching Transistors

• High DC current gain: 0.1 mA to 100 mA

• Low colltector-emitter saturation voltage

• For SMBT3906S and SMBT3906U:

Two (galvanic) internal isolated transistor

with good matching in one package

• Complementary types:

SMBT3904...MMBT3904 (NPN)

• SMBT3904S / U: for orientation in reel

see package information below

SMBT3906S/U

TR2

TR1

EHA07175

Type

Marking

s2A

Pin Configuration

Package

SOT23

TSLP-3-4

SMBT3906/ MMBT3906

SMBT3906L3

1=B 2=E 3=C

SMBT3906S

SMBT3906U

s2A

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Symbol

Value

200

Unit

CEO

CBO

EBO

K/W

Total power dissipation-

tot

T ≤ 71 °C

330

250

330

T ≤ tbd °C

T ≤ 115 °C

T ≤ 105 °C

150

°C

Junction temperature

Storage temperature

-65 ... 150

stg

2006-07-11

12 3 4 5 6 7...13

中文翻译

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