Datasheet > SMBT3906_08

SMBT3906_08

更新时间： 2024-11-26 06:12:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	883K
描述
High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage

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SMBT3906_08 数据手册

SMBT3906...MMBT3906

PNP Silicon Switching Transistors

• High DC current gain: 0.1 mA to 100 mA

• Low collector-emitter saturation voltage

• For SMBT3906S and SMBT3906U:

Two (galvanic) internal isolated transistor

with good matching in one package

• Complementary types:

SMBT3904...MMBT3904 (NPN)

• SMBT3904S / U: for orientation in reel

see package information below

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

SMBT3906S/U

TR2

TR1

EHA07175

Type

Marking

s2A

Pin Configuration

1=B 2=E 3=C

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

Package

SOT23

SMBT3906/ MMBT3906

SMBT3906S

SMBT3906U

s2A

¹Pb-containing package may be available upon special request

2008-02-29

12 3 4 5 6 7...13

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型号	品牌	获取价格	描述	数据表
SMBT3906DW1T1G	ONSEMI	获取价格	Dual PNP Bipolar Transistor
SMBT3906DW3T1G	ONSEMI	获取价格	Dual PNP Bipolar Transistor
SMBT3906E6327	INFINEON	获取价格	PNP Silicon Switching Transistors
SMBT3906E6327	ROCHESTER	获取价格	200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR
SMBT3906E6327HTSA1	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,
SMBT3906E6327XT	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,
SMBT3906E6433	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,
SMBT3906L3-E6327	INFINEON	获取价格	Transistor
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SMBT3906SE6327	INFINEON	获取价格	Transistor