SKM600GA12E4
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
1200
916
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
704
ICnom
600
ICRM
ICRM = 3xICnom
1800
-20 ... 20
VGES
SEMITRANS®4
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
IGBT4 Modules
SKM600GA12E4
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
707
529
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
600
A
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
1800
A
Features
3240
A
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x ICNOM
-40 ... 175
°C
Module
It(RMS)
Tstg
500
-40 ... 125
4000
A
°C
V
• Soft switching 4. Generation CAL
diode (CAL4)
Visol
AC sinus 50Hz, t = 1 min
Typical Applications
• AC inverter drives
• UPS
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
• Electronic welders at fsw up to 20 kHz
IC = 600 A
VCE(sat)
Tj = 25 °C
1.8
2.2
2.05
2.4
V
V
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.8
0.7
1.7
2.5
5.8
0.1
0.9
0.8
1.9
2.7
6.5
0.3
V
V
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
• Short circuit: Soft Turn-off
recommended RGoff > 20 Ω
• With RG = 2 Ω the RBSOA is limited to
1 x ICnom = 600 A
mΩ
mΩ
V
VGE = 15 V
VGE(th)
ICES
VGE=VCE, IC = 24 mA
Tj = 25 °C
V
5
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 1200 V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
37.2
2.32
2.04
3400
1.3
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
td(on)
tr
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
195
90
ns
VCC = 600 V
IC = 600 A
ns
V
GE = ±15 V
Eon
td(off)
tf
74
mJ
ns
R
R
G on = 2 Ω
G off = 2 Ω
690
130
84
ns
di/dton = 6000 A/µs
di/dtoff = 5200 A/µs
Eoff
Rth(j-c)
mJ
K/W
per IGBT
0.049
GA
© by SEMIKRON
Rev. 0 – 19.02.2009
1