Datasheet > SKM600GAL07E3

SKM600GAL07E3

更新时间： 2024-11-19 14:52:35

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
7页	585K
描述
IGBT Modules SEMITRANS 3 (106x62x31)

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中文翻译

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数据手册

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SKM600GAL07E3 数据手册

SKM600GAL07E3

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

650

852

644

600

1800

-20 ... 20

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

SEMITRANS^®3

Trench IGBT Modules

SKM600GAL07E3

Features*

V_CC= 360 V

_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

_CES≤ 650 V

T_j

-40 ... 175

Inverse diode

T_j= 25 °C

V_RRM

I_F

650

812

595

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

600

1200

4320

-40 ... 175

• V_CE(sat)with positive temperature

coefficient

t_p= 10 ms, sin 180°, T_j= 25 °C

°C

• High short circuit capability, self limiting

to 6 x I_cnom

• Fast & soft switching inverse CAL

diodes

• Insulated copper baseplate using DCB

Technology (Direct Copper Bonding)

• With integrated gate resistor

Freewheeling diode

T_j= 25 °C

V_RRM

I_F

650

812

595

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

600

1200

4320

-40 ... 175

Typical Applications

t_p= 10 ms, sin 180°, T_j= 25 °C

°C

• Electronic welders

• DC/DC – converter

• Brake chopper

Module

I_t(RMS)

T_stg

• Switched reluctance motor

500

-40 ... 125

4000

°C

Remarks

• Case temperature limited

to T_c= 125°C max.

module without TIM

AC sinus 50 Hz, t = 1 min

V_isol

• Recommended T_op= -40 ... +150°C

• Product reliability results valid

for T_j= 150°C

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

• Use of soft R_Gnecessary

I_C= 600 A

T_j= 25 °C

V_CE(sat)

1.45

1.70

1.90

2.10

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.90

0.82

0.92

1.47

5.8

1.00

0.90

1.50

2.00

6.4

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

V_GE=V_CE, I_C= 9.6 mA

V_GE= 0 V, V_CE= 650 V, T_j= 25 °C

f = 1 MHz

5.1

0.3

37.0

2.32

1.10

4800

0.5

V_CE= 25 V

f = 1 MHz

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

GAL

Rev. 1.0 – 29.05.2020

12 3 4 5 6 7

中文翻译

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