SKM600GAR07E3
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Unit
Tj = 25 °C
VCES
IC
650
852
644
600
1800
-20 ... 20
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
SEMITRANS® 3
Trench IGBT Modules
SKM600GAR07E3
Features*
VCC = 360 V
V
V
GE ≤ 15 V
Tj = 150 °C
tpsc
6
µs
°C
CES ≤ 650 V
Tj
-40 ... 175
Inverse diode
Tj = 25 °C
VRRM
IF
650
812
595
V
A
A
A
A
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
600
1200
4320
-40 ... 175
• VCE(sat) with positive temperature
coefficient
tp = 10 ms, sin 180°, Tj = 25 °C
A
°C
• High short circuit capability, self limiting
to 6 x Icnom
• Fast & soft switching inverse CAL
diodes
• Insulated copper baseplate using DCB
Technology (Direct Copper Bonding)
• With integrated gate resistor
Freewheeling diode
Tj = 25 °C
VRRM
IF
650
812
595
V
A
A
A
A
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
600
1200
4320
-40 ... 175
Typical Applications
tp = 10 ms, sin 180°, Tj = 25 °C
A
°C
• Electronic welders
• DC/DC – converter
• Brake chopper
Module
It(RMS)
Tstg
• Switched reluctance motor
500
-40 ... 125
4000
A
°C
V
Remarks
• Case temperature limited
to Tc = 125°C max.
module without TIM
AC sinus 50 Hz, t = 1 min
Visol
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
• Use of soft RG necessary
IC = 600 A
Tj = 25 °C
VCE(sat)
1.45
1.70
1.90
2.10
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.90
0.82
0.92
1.47
5.8
1.00
0.90
1.50
2.00
6.4
V
V
mΩ
mΩ
V
mA
nF
nF
nF
nC
Ω
chiplevel
VGE = 15 V
chiplevel
VGE(th)
ICES
Cies
Coes
Cres
QG
VGE=VCE, IC = 9.6 mA
VGE = 0 V, VCE = 650 V, Tj = 25 °C
f = 1 MHz
5.1
0.3
37.0
2.32
1.10
4800
0.5
VCE = 25 V
f = 1 MHz
f = 1 MHz
V
GE = 0 V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
GAR
© by SEMIKRON
Rev. 1.0 – 29.05.2020
1