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SKM600GAR07E3 PDF预览

SKM600GAR07E3

更新时间: 2024-11-07 14:55:51
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
7页 585K
描述
IGBT Modules SEMITRANS 3 (106x62x31)

SKM600GAR07E3 数据手册

 浏览型号SKM600GAR07E3的Datasheet PDF文件第2页浏览型号SKM600GAR07E3的Datasheet PDF文件第3页浏览型号SKM600GAR07E3的Datasheet PDF文件第4页浏览型号SKM600GAR07E3的Datasheet PDF文件第5页浏览型号SKM600GAR07E3的Datasheet PDF文件第6页浏览型号SKM600GAR07E3的Datasheet PDF文件第7页 
SKM600GAR07E3  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
650  
852  
644  
600  
1800  
-20 ... 20  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
SEMITRANS® 3  
Trench IGBT Modules  
SKM600GAR07E3  
Features*  
VCC = 360 V  
V
V
GE 15 V  
Tj = 150 °C  
tpsc  
6
µs  
°C  
CES 650 V  
Tj  
-40 ... 175  
Inverse diode  
Tj = 25 °C  
VRRM  
IF  
650  
812  
595  
V
A
A
A
A
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
600  
1200  
4320  
-40 ... 175  
• VCE(sat) with positive temperature  
coefficient  
tp = 10 ms, sin 180°, Tj = 25 °C  
A
°C  
• High short circuit capability, self limiting  
to 6 x Icnom  
• Fast & soft switching inverse CAL  
diodes  
• Insulated copper baseplate using DCB  
Technology (Direct Copper Bonding)  
• With integrated gate resistor  
Freewheeling diode  
Tj = 25 °C  
VRRM  
IF  
650  
812  
595  
V
A
A
A
A
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
600  
1200  
4320  
-40 ... 175  
Typical Applications  
tp = 10 ms, sin 180°, Tj = 25 °C  
A
°C  
• Electronic welders  
• DC/DC – converter  
• Brake chopper  
Module  
It(RMS)  
Tstg  
• Switched reluctance motor  
500  
-40 ... 125  
4000  
A
°C  
V
Remarks  
• Case temperature limited  
to Tc = 125°C max.  
module without TIM  
AC sinus 50 Hz, t = 1 min  
Visol  
• Recommended Top = -40 ... +150°C  
• Product reliability results valid  
for Tj = 150°C  
Characteristics  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
• Use of soft RG necessary  
IC = 600 A  
Tj = 25 °C  
VCE(sat)  
1.45  
1.70  
1.90  
2.10  
V
V
V
GE = 15 V  
Tj = 150 °C  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.90  
0.82  
0.92  
1.47  
5.8  
1.00  
0.90  
1.50  
2.00  
6.4  
V
V
mΩ  
mΩ  
V
mA  
nF  
nF  
nF  
nC  
Ω
chiplevel  
VGE = 15 V  
chiplevel  
VGE(th)  
ICES  
Cies  
Coes  
Cres  
QG  
VGE=VCE, IC = 9.6 mA  
VGE = 0 V, VCE = 650 V, Tj = 25 °C  
f = 1 MHz  
5.1  
0.3  
37.0  
2.32  
1.10  
4800  
0.5  
VCE = 25 V  
f = 1 MHz  
f = 1 MHz  
V
GE = 0 V  
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
RGint  
GAR  
© by SEMIKRON  
Rev. 1.0 – 29.05.2020  
1

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