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SKM600GB12E4 PDF预览

SKM600GB12E4

更新时间: 2024-11-18 19:49:55
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON
页数 文件大小 规格书
6页 643K
描述
Insulated Gate Bipolar Transistor,

SKM600GB12E4 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.68
Base Number Matches:1

SKM600GB12E4 数据手册

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SKM600GB12E4  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1200  
860  
702  
600  
1800  
-20 ... 20  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
SEMITRANS® 3  
VCC = 800 V  
V
V
GE 15 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
CES 1200 V  
Tj  
-40 ... 175  
IGBT4 Modules  
Inverse diode  
Tj = 25 °C  
VRRM  
IF  
1200  
623  
466  
500  
1200  
V
A
A
A
A
SKM600GB12E4  
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
Target Data  
IFnom  
IFRM  
IFSM  
Tj  
Features  
• IGBT4 = 4th generation medium fast  
trench IGBT (Infineon)  
tp = 10 ms, sin 180°, Tj = 25 °C  
2736  
-40 ... 175  
A
°C  
• CAL4 = Soft switching 4th generation  
CAL-diode  
Module  
It(RMS)  
Tstg  
• Insulated copper baseplate using DBC  
technology (Direct Bonded Copper)  
• Increased power cycling capability  
• With integrated gate resistor  
• For higher switching frequencies up to  
12kHz  
500  
-40 ... 125  
4000  
A
°C  
V
module without TIM  
AC sinus 50 Hz, t = 1 min  
Visol  
Characteristics  
• UL recognized, file no. E63532  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
Typical Applications*  
• AC inverter drives  
• UPS  
IC = 600 A  
Tj = 25 °C  
VCE(sat)  
1.80  
2.20  
2.05  
2.42  
V
V
V
GE = 15 V  
Tj = 150 °C  
chiplevel  
Remarks  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.80  
0.70  
1.67  
2.5  
0.90  
0.80  
1.92  
2.7  
6.5  
V
V
mΩ  
mΩ  
V
mA  
nF  
nF  
nF  
nC  
Ω
ns  
ns  
mJ  
ns  
ns  
• Case temperature limited to  
Tc = 125°C max, recomm.  
chiplevel  
T
op = -40 ... +150°C, product  
VGE = 15 V  
chiplevel  
rel. results valid for Tj = 150°  
VGE(th)  
ICES  
Cies  
Coes  
Cres  
QG  
RGint  
td(on)  
tr  
VGE=VCE, IC = 24 mA  
VGE = 0 V, VCE = 1200 V, Tj = 25 °C  
f = 1 MHz  
5
5.8  
5
37.2  
2.32  
2.04  
3400  
1.3  
156  
68  
30  
VCE = 25 V  
f = 1 MHz  
f = 1 MHz  
V
GE = 0 V  
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
VCC = 600 V  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
I
C = 600 A  
V
GE = +15/-15 V  
Eon  
td(off)  
tf  
R
R
G on = 1.8 Ω  
G off = 1 Ω  
522  
138  
di/dton = 9100 A/µs  
di/dtoff = 4000 A/µs  
du/dt = 3500 V/µs  
Ls = 25 nH  
Tj = 150 °C  
Eoff  
77  
mJ  
Rth(j-c)  
Rth(c-s)  
per IGBT  
per IGBT (λgrease=0.81 W/(m*K))  
per IGBT, pre-applied phase change  
material  
0.049  
K/W  
K/W  
0.032  
0.016  
Rth(c-s)  
K/W  
GB  
© by SEMIKRON  
Rev. 0.4 – 01.03.2019  
1

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