是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | DO-204 |
包装说明: | CASE D62, SEMITRANS 2, 5 PIN | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.82 | Is Samacsys: | N |
其他特性: | UL RECOGNIZED | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 75 A | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE WITH BUILT-IN DIODE | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X7 | JESD-609代码: | e3/e4 |
元件数量: | 1 | 端子数量: | 7 |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 400 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | TIN/SILVER | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 450 ns | 标称接通时间 (ton): | 100 ns |
VCEsat-Max: | 3 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SKM75GAR063D | SEMIKRON |
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Superfast NPT-IGBT Modules | |
SKM75GAR101D | SEMIKRON |
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Insulated Gate Bipolar Transistor, 75A I(C), 1000V V(BR)CES, N-Channel | |
SKM75GAR121D | SEMIKRON |
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Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel | |
SKM75GAR123D | SEMIKRON |
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SEMITRANS IGBT Modules New Range | |
SKM75GB063D | SEMIKRON |
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Superfast NPT-IGBT Modules | |
SKM75GB063D_06 | SEMIKRON |
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Superfast NPT-IGBT Modules | |
SKM75GB063D_07 | SEMIKRON |
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Superfast NPT-IGBT Modules | |
SKM75GB07E3 | SEMIKRON |
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IGBT Modules SEMITRANS 2 (94x34x30) | |
SKM75GB101D | SEMIKRON |
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Insulated Gate Bipolar Transistor, 75A I(C), 1000V V(BR)CES, N-Channel, | |
SKM75GB121D | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, |