Datasheet > SKM600GAE12E4

SKM600GAE12E4

更新时间： 2024-11-19 14:55:55

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
6页	432K
描述
IGBT Modules SEMITRANS 5 (106x62x31)

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中文翻译

获取价格

技术参数
数据手册

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SKM600GAE12E4 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.62
Base Number Matches：	1

SKM600GAE12E4 数据手册

SKM600GAE12E4

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

913

702

600

1800

-20 ... 20

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3xI_Cnom

SEMITRANS^®5

V_CC= 800 V

V_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

V_CES≤ 1200 V

T_j

-40 ... 175

IGBT4 Modules

Inverse diode

Engineering Sample

SKM600GAE12E4

Target Data

T_c= 25 °C

T_c= 80 °C

I_F

100

180

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

Features

ꢀ IGBT4 = 4. generation medium fast

trench IGBT

-40 ... 175

°C

Freewheeling diode

ꢀ CAL4F = Soft switching 4. generation

CAL-diode

T_c= 25 °C

T_c= 80 °C

I_F

936

695

900

1800

4320

T_j= 175 °C

ꢀ Enhanced 900A free-wheeling diode

ꢀ With integrated gate resistor

ꢀ Isolated copper baseplate using DBC

technology (Direct Bonded Copper)

ꢀ UL recognized, file no. E63532

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

AC sinus 50 Hz, t = 1 min

-40 ... 175

°C

Remarks

Module

I_t(RMS)

T_stg

ꢀ Case temperature limited to T_c= 125°C

500

-40 ... 125

2500

°C

max

ꢀ Recommended T_op= -40 ... +150°C

ꢀ Product reliability results valid for T_j=

150°

V_isol

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

I_C= 600 A

T_j= 25 °C

V_CE(sat)

1.80

2.20

2.05

2.42

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.80

0.70

1.67

2.5

0.90

0.80

1.92

2.7

6.5

mΩ

Ω

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

V_GE=V_CE, I_C= 24 mA

T_j= 25 °C

5.8

V_GE= 0 V

_CE= 1200 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

37.2

2.32

2.04

3400

1.3

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

GAE

Rev. 0.2 – 05.10.2016

12 3 4 5 6

中文翻译

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