Datasheet > SI9936DYS62Z

SI9936DYS62Z

更新时间： 2024-09-16 10:06:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	240K
描述
Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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SI9936DYS62Z 数据手册

June 1999

Si9936DY*

Dual N-Channel Enhancement Mode MOSFET

General Description

Features

These N-Channel Enhancement Mode MOSFETs are

produced using Fairchild Semiconductor's advance

process that has been especially tailored to minimize

on-state resistance and yet maintain superior switching

performance.

5.0 A, 30 V. R_DS(ON)= 0.050 Ω @ V_GS= 10 V

R_DS(ON)= 0.080 Ω @ V_GS= 4.5 V

Low gate charge.

Fast switching speed.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

High power and current handling capability.

Applications

Battery switch

Load switch

Motor controls

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1999 Fairchild Semiconductor Corporation

Si9936DY Rev. A

12 3

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与SI9936DYS62Z相关器件

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SI9936DY-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, 2-Element, Silicon, LEAD FREE, SOP-8
SI9939DY	VISHAY	获取价格	Complimentary 30-V (D-S) MOSFET
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