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SI9936BDY-T1-GE3 PDF预览

SI9936BDY-T1-GE3

更新时间: 2024-09-15 12:28:35
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管光电二极管
页数 文件大小 规格书
9页 252K
描述
Dual N-Channel 30-V (D-S) MOSFET

SI9936BDY-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.74Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):4.5 A最大漏极电流 (ID):4.5 A
最大漏源导通电阻:0.035 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):250极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICONBase Number Matches:1

SI9936BDY-T1-GE3 数据手册

 浏览型号SI9936BDY-T1-GE3的Datasheet PDF文件第2页浏览型号SI9936BDY-T1-GE3的Datasheet PDF文件第3页浏览型号SI9936BDY-T1-GE3的Datasheet PDF文件第4页浏览型号SI9936BDY-T1-GE3的Datasheet PDF文件第5页浏览型号SI9936BDY-T1-GE3的Datasheet PDF文件第6页浏览型号SI9936BDY-T1-GE3的Datasheet PDF文件第7页 
Si9936BDY  
Vishay Siliconix  
Dual N-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
6.0  
Definition  
0.035 at VGS = 10 V  
0.052 at VGS = 4.5 V  
Compliant to RoHS Directive 2002/95/EC  
30  
4.9  
D
1
D
2
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
1
G
2
G
Top View  
S
1
S
2
Ordering Information:  
Si9936BDY-T1-E3 (Lead (Pb)-free)  
Si9936BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
40  
V
VGS  
20  
TA = 25 °C  
TA = 70 °C  
6.0  
4.8  
4.5  
3.6  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
1.7  
2.0  
1.3  
0.9  
1.1  
0.7  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipationa  
PD  
W
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
53  
Maximum  
62.5  
Unit  
t 10 s  
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
92  
110  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
30  
40  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
Document Number: 72521  
S09-0704-Rev. C, 27-Apr-09  
www.vishay.com  
1

SI9936BDY-T1-GE3 替代型号

型号 品牌 替代类型 描述 数据表
SI4936CDY-T1-GE3 VISHAY

类似代替

Dual N-Channel 30-V (D-S) MOSFET

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