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SI9936DY PDF预览

SI9936DY

更新时间: 2024-09-14 22:33:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
3页 239K
描述
Dual N-Channel Enhancement Mode MOSFET

SI9936DY 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOIC-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.35
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):5 A
最大漏极电流 (ID):5 A最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI9936DY 数据手册

 浏览型号SI9936DY的Datasheet PDF文件第2页浏览型号SI9936DY的Datasheet PDF文件第3页 
June 1999  
Si9936DY*  
Dual N-Channel Enhancement Mode MOSFET  
General Description  
Features  
These N-Channel Enhancement Mode MOSFETs are  
produced using Fairchild Semiconductor's advance  
process that has been especially tailored to minimize  
on-state resistance and yet maintain superior switching  
performance.  
• 5.0 A, 30 V. RDS(ON) = 0.050 @ VGS = 10 V  
RDS(ON) = 0.080 @ VGS = 4.5 V  
• Low gate charge.  
• Fast switching speed.  
These devices are well suited for low voltage and  
battery powered applications where low in-line power  
loss and fast switching are required.  
• High power and current handling capability.  
Applications  
• Battery switch  
• Load switch  
• Motor controls  
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1999 Fairchild Semiconductor Corporation  
Si9936DY Rev. A  

SI9936DY 替代型号

型号 品牌 替代类型 描述 数据表
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