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SI9936DY PDF预览

SI9936DY

更新时间: 2024-09-14 22:33:55
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管开关脉冲光电二极管
页数 文件大小 规格书
13页 245K
描述
N-channel enhancement mode field-effect transistor

SI9936DY 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:PLASTIC, SO-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.36
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
最大漏源导通电阻:0.05 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI9936DY 数据手册

 浏览型号SI9936DY的Datasheet PDF文件第2页浏览型号SI9936DY的Datasheet PDF文件第3页浏览型号SI9936DY的Datasheet PDF文件第4页浏览型号SI9936DY的Datasheet PDF文件第5页浏览型号SI9936DY的Datasheet PDF文件第6页浏览型号SI9936DY的Datasheet PDF文件第7页 
Si9936DY  
N-channel enhancement mode field-effect transistor  
M3D315  
Rev. 01 — 16 July 2001  
Product data  
1. Description  
Dual N-channel enhancement mode field-effect transistor in a plastic package using  
TrenchMOS™1 technology.  
Product availability:  
Si9936DY in SOT96-1 (SO8).  
2. Features  
Low on-state resistance  
Fast switching  
TrenchMOS™ technology.  
3. Applications  
DC to DC convertors  
DC motor control  
Lithium-ion battery applications  
Notebook PC  
c
c
Portable equipment applications.  
4. Pinning information  
Table 1: Pinning - SOT96-1, simplified outline and symbol  
Pin  
1
Description  
source 1 (s1)  
gate 1 (g1)  
Simplified outline  
Symbol  
d1  
d2  
8
7
6
5
2
3
source 2 (s2)  
gate 2 (g2)  
pin 1 index  
4
03ab52  
03ab58  
5,6  
7,8  
drain 2 (d2)  
drain 1 (d1)  
1
2
3
4
g1  
s1  
g2  
s2  
SOT96-1 (SO8)  
1. TrenchMOS is a trademark of Royal Philips Electronics.  

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