Datasheet > SI6423DQ

SI6423DQ

更新时间： 2024-11-17 21:55:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	43K
描述
P-Channel 12-V (D-S) MOSFET

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SI6423DQ 数据手册

Si6423DQ

Vishay Siliconix

New Product

P-Channel 12-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

D Load Switch

0.0085 @ V = -4.5 V

-9.5

-8.5

-7.5

0.0106 @ V = -2.5 V

-12

0.014 @ V = -1.8 V

TSSOP-8

* Source Pins 2, 3, 6 and 7

must be tied common.

Top View

Ordering Information: Si6423DQ

Si6423DQ-T1 (with Tape and Reel)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-12

= 25_C

= 70_C

-9.5

-8

-8.2

-6.5

Continuous Drain Current (T = 150_C)

Pulsed Drain Current (10 ms Pulse Width)

-30

Continuous Source Current (Diode Conduction)

-1.35

1.5

-0.95

1.05

0.67

= 25_C

= 70_C

Maximum Power Dissipation

1.0

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

100

120

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72257

S-31419—Rev. A, 07-Jul-03

www.vishay.com

12 3 4 5

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