Datasheet > SI6441DQ

SI6441DQ

更新时间： 2024-11-17 21:55:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	43K
描述
P-Channel 30-V (D-S) MOSFET

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中文翻译

获取价格

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SI6441DQ 数据手册

Si6441DQ

Vishay Siliconix

New Product

P-Channel 30-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

APPLICATIONS

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

D Battery Switch

D Load Switch

0.015 @ V = -10 V

-8

-30

0.024 @ V = -4.5 V

-6.4

TSSOP-8

* Source Pins 2, 3, 6 and 7

must be tied common.

Si6441DQ

Top View

P-Channel MOSFET

Ordering Information: Si6441DQ-T1

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-30

"20

= 25_C

= 70_C

-8

-6.3

-5.0

Continuous Drain Current (T = 150_C)

-6.4

Pulsed Drain Current (10 ms Pulse Width)

-30

Continuous Source Current (Diode Conduction)

-1.6

1.75

1.14

-01.0

1.08

0.69

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

115

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72213

S-03984—Rev. A, 19-May-03

www.vishay.com

12 3 4 5

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与SI6441DQ相关器件

型号	品牌	获取价格	描述	数据表
SI6441DQ-T1	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
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SI6443DQ	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
SI6443DQ-E3	VISHAY	获取价格	Transistor
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SI6459BDQ	VISHAY	获取价格	P-Channel 60-V (D-S) MOSFET
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